| PART |
Description |
Maker |
| K6T4008C1B-DB70 |
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG
|
| KM23V4000D |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM) 4分位512Kx8）的CMOS掩模ROM分位512Kx8）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| BS62LV4008 BS62LV4008TI BS62LV4008TC BS62LV4008STC |
From old datasheet system
Asynchronous 4M(512Kx8) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
Brilliance Semiconducto...
|
| KM23V4100D KM23V4100DG |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位512Kx8 / 256Kx16）的CMOS掩模ROM分位512Kx8 / 256Kx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| 29F004T-55 29F004T-70 29F004T-90 MX29F004TQC-12G M |
4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International Co., Ltd.
|
| HT27C040 |
CMOS 512Kx8-Bit OTP EPROM
|
holtek
|
| HT23C040 23C040 |
CMOS 512Kx8-Bit Mask ROM
From old datasheet system
CMOS 512K8-Bit Mask ROM
|
HOLTEK[Holtek Semiconductor Inc]
|
| K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008 |
CMOS SRAM
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
|
Samsung semiconductor
|
| KM6264B KM6264BLP-7L KM6264BLG-10 KM6264BLG-10L KM |
8K x 8 bit CMOS static RAM, 100ns, low low power
8K x 8 bit Low Power CMOS Static RAM
8Kx8 bit Low Power CMOS Static RAM 8Kx8位低功耗CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IDTQS3L384SO IDTQS3L384Q QS3L384Q IDTQS3L384QG IDT |
QuikSwitch High-Speed Low Power CMOS 10-Bit Bus Switch
QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS EXCHANGE SWITCH 3L SERIES, 10-BIT DRIVER, TRUE OUTPUT, PDSO24
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
